Publication - KENTECH UHPS Lab

UHPS's Paper

Sangyun Song, Seunghyun Park, Dong-Seok Kim, and Hyemin Kang, "Comparative Study of Proton and Gamma-Ray Radiation on the Threshold Voltage Shifts and the Reverse Recovery of Superjunction MOSFETs," IEEE Transactions on Electron Devices, Jan. 2025.
Yeonju Lee and Hyemin Kang, "On the Analysis of Asymmetrical Switching of SiC MOSFETs," IEEE Transactions on Power Electronics, vol. 40, no. 10, Oct. 2025.
Taehyun Jang and Hyemin Kang, "Investigation of SiC MOSFET's current hump mechanism induced by false turn-on of the high-side body diode," Power Electronic Devices and Components, Dec. 2025.
Yeonjun Kim and Hyemin Kang, "Chip size dependent dynamic behavior of SiC MOSFETs with edge termination," Power Electronic Devices and Components, Dec. 2025.
Yeonjun Kim, H. Park, S. Yoon, and Hyemin Kang, "Evaluating current sensing methods for accurate characterization in small chip size SiC MOSFETs," Power Electronic Devices and Components, 2025.
Sangyun Song, D. S. Kim, and Hyemin Kang, "Comparative Analysis on To-247-3l and To-247-4l Packaged 4h-Sic Mosfets Dynamic Switching Under Gamma Ray," SSRN, 2025.

Yeonju Lee and Hyemin Kang, "Plateau Voltage and Dynamic Capacitance Effect on SiC MOSFETs' Gate Ringing," IEEE Transactions on Electron Devices, Dec. 2024.
Sangyun Song, Dong-Seok Kim, and Hyemin Kang, "Gamma Ray on Superjunction MOSFET and Gate Ringing," IEEE Transactions on Electron Devices, July 2024.
Yeonjun Kim and Hyemin Kang, "Effect of Chip Size on Reverse Recovery of SiC MOSFETs with Edge Termination," Scientific Books of Abstracts, vol. 8, 2024.

Professor's Paper

Hyemin Kang and F. Udrea, "Bipolar to unipolar conversion in superjunction MOSFETs during resonant switching," Power Electronic Devices and Components, vol. 9, 100071, Dec. 2024.

Hyemin Kang and F. Udrea, "Gate ringing in superjunction MOSFETs with a parasitic capacitance in the load inductor," Power Electronic Devices and Components, vol. 4, 100029, 2023.

Hyemin Kang and F. Udrea, "Gate Ringing in Superjunction Mosfets with a Parasitic Capacitance in the Load Inductor," IEEE Transactions on Power Electronics, 2022.
Hyemin Kang, N. Donato, and F. Udrea, "The Effect of the Pillar Ripple on the Reverse Recovery in Superjunction Mosfets," IEEE Transactions on Electron Devices, vol. 69, no. 1, pp. 100009, 2022.
Hyemin Kang, "IGBT Reverse Transfer Dynamic Capacitance," IEEE Transactions on Electron Devices, vol. 69, no. 12, pp. 6910-6916, 2022.
Hyemin Kang, "Trench split gate MOSFET’s inductive switching," IEEE Transactions on Electron Devices, vol. 69, no. 9, pp. 5399-5403, 2022.

Hyemin Kang and F. Udrea, "True origin of gate ringing in superjunction MOSFETs: Device view," IEEE Transactions on Power Electronics, vol. 36, no. 5, pp. 5362-5370, 2021.
Hyemin Kang, F. Udrea et al., "The FinFET effect in Silicon Carbide MOSFETs," 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2021.

Hyemin Kang, E. M. Findlay, and F. Udrea, "Mechanisms of Asymmetrical Turn-On and Turn-Off and the Origin of Dynamic CGD Hysteresis for Hard-Switching Superjunction MOSFETs," IEEE Transactions on Electron Devices, vol. 67, no. 6, 2020.
Hyemin Kang and F. Udrea, "Investigation of dynamic Rdson in Superjunction MOSFETs," IEEE Transactions on Electron Devices, vol. 67, no. 4, 2020.
Hyemin Kang and F. Udrea, "Dynamic CGD and dV/dt in Superjunction MOSFETs," IEEE Transactions on Electron Devices, vol. 67, no. 4, 2020.
Hyemin Kang, N. Donato, F. Udrea, "Effect of pillar ripple on static and dynamic trade-offs in superjunction MOSFETs," IEEE Electron Device Letters, vol. 41, no. 5, 2020.
Hyemin Kang, F. Udrea, "Current density and gate ringing in superjunction MOSFETs," 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020.
Hyemin Kang, "Theory of Superjunction Devices," Ph.D. Thesis, University of Cambridge, 2020.

Hyemin Kang and F. Udrea, "Theory of 3-D superjunction MOSFET," IEEE Transactions on Electron Devices, vol. 66, no. 12, 2019.
Hyemin Kang and F. Udrea, "Analytic model of specific ON-state resistance for superjunction MOSFETs with an oxide pillar," IEEE Electron Device Letters, vol. 40, no. 5, 2019.
Hyemin Kang and F. Udrea, "On the quasi-saturation in state-of-the-art power MOSFETs," IEEE Electron Device Letters, vol. 40, no. 5, 2019.
Hyemin Kang and F. Udrea, "Static and dynamic figures of merits (FOM) for superjunction MOSFETs," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019.

Hyemin Kang and F. Udrea, "Material Limit of Power Devices—Applied to Asymmetric 2-D Superjunction MOSFET," IEEE Transactions on Electron Devices, vol. 65, no. 8, 2018.
Hyemin Kang and F. Udrea, "True material limit of power devices—Applied to 2-D superjunction MOSFET," IEEE Transactions on Electron Devices, vol. 65, no. 4, 2018.
Hyemin Kang and F. Udrea, "On the specific on-state resistance of superjunction MOSFETs with a compensated pillar," IEEE Electron Device Letters, vol. 39, no. 12, 2018.
Hyemin Kang and F. Udrea, "High Pillar Doping Concentration for SiC Superjunction IGBTs," 2018 IEEE International Conference on Silicon Carbide and Related Materials (ICSCRM), 2018.
Hyemin Kang and S. Kim, "A New Nonisolated High-Voltage-Gain Boost Converter With Inherent Output Voltage Balancing," IEEE Transactions on Industrial Electronics, vol. 65, no. 4, 2018.

H. Kang, J. Lee, K. Lee, and Y. Choi, "Trench angle: a key design factor for a deep trench superjunction MOSFET," Semiconductor Science and Technology, vol. 30, no. 12, 2015.
H. Kang et al., "n-ZnO: N/p-Si nanowire photodiode prepared by atomic layer deposition," Applied Physics Letters, vol. 100, no. 4, 2012.
H. Kang et al., "Photocatalytic effect of thermal atomic layer deposition of TiO2 on stainless steel," Applied Catalysis B: Environmental, vol. 104, no. 1-2, pp. 6-11, 2011.